Fabrication of BaTiO3 Thin Films Using Modified Chemical Solutions and Sintering Method

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BaTiO3 thin films were fabricated at 650 °C by single sintering using additive-free and diethanolamine (DEA)-modified alkoxide solutions. The BaTiO3 thin films derived from the DEA-modified solution had a flat surface and an rms roughness below 2.5 nm. The grain size on Pt/Ti/SiO2/Si substrates single-sintered at 650 °C for 100 min was estimated to be about 34 to 43 nm. We succeeded in obtaining the electric properties of Pt/BaTiO3/Pt capacitors by single sintering at 650 °C for 1 min. The dielectric constant $\varepsilon_{\text{r}}$ and dielectric loss $\tan\delta$ at 1 MHz were 110 and 0.05, respectively. On the other hand, the grain size on SiO2/Si substrates single-sintered at 650 °C for 100 min reached about 55 to 62 nm. For the thickness and Fourier-transform infrared (FT-IR) spectra of the gel films, it was found that the thickness of the gel films at around 200 °C derived from the DEA-modified solution became abnormally thick and that the intermediate compounds generated during the decomposition of DEA remained in the gel films.
2008-09-25