Microstructure Control and Dielectric/Piezoelectric Properties of Alkoxy-Derived Ba(Ti,Zr)O3 Thin Films

概要

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Lead-free ferroelectric Ba(Ti1-xZrx)O3 (BTZ, $x=0.00--0.50$) thin films were fabricated on Pt(111)/Ti/SiO2/Si(100) substrates by the chemical solution deposition (CSD) process using complex alkoxide solutions. When the Zr content $x$ was increased, the crystallinity of BTZ thin films was changed from the typical random orientation to the (111) preferred orientation. From the composition dependence of the dielectric constant $\varepsilon_{\text{r}}$ and piezoelectric constant $d_{33}$, the pinching region at room temperature of BTZ thin films consisting of nano-crystals appeared around $x=0.20$. For the BTZ thin film ($x=0.20$) fabricated using an alkoxide solution with partial hydrolysis, the grain and crystallite size were increased, and the $\varepsilon_{\text{r}}$ and $d_{33}$ were improved to 253 and 8.9 pm/V, respectively.
Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
2005-09-15