Room Temperature Photoluminescence from Erbium in Silica by Evaporation and Thermal Oxidation
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概要
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Room temperature photoluminescence (PL) at 1.54 μm from erbium-doped silicon rich silicon oxide (ErSRSO) films, fabricated on fused quartz by thermal evaporation followed by thermal-annealing in air, is reported. PL measurements show maximum intensity in samples annealed at 1000 °C for 4 h. X-ray diffraction (XRD) structural analyses show that annealing caused the formation of active Er3+ (Er2O3) centers. XRD and PL results show that increasing Er2O3 concentration does not necessarily lead to an increase in photoluminescence. Compositional analysis using time-of-flight secondary ion mass spectroscopy (TOF-SIMS) depth-profiling shows a strong correlation between the presence of contiguous Si rich regions and Er2O3 centers on the one hand and the observed PL on the other. The combination of PL, XRD, and TOF-SIMS results indicate the presence of silicon clusters and its sensitization of erbium. These results are consistent with the literature reported decomposition of SiOx at elevated temperatures which in turn leads to the formation of Si clusters in the silicon oxide matrix.
- 2008-09-25
著者
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Qian Li
Department of Electrical and Computer Engineering, University of Toronto, Toronto, ON, M5S 3G4, Canada
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Shams-Kolahi Wahid
Department of Electrical and Computer Engineering, University of Toronto, Toronto, ON, M5S 3G4, Canada
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Zukotynski Stefan
Department of Electrical and Computer Engineering, University of Toronto, Toronto, ON, M5S 3G4, Canada
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Alizadeh Hossein
Department of Electrical and Computer Engineering, University of Toronto, Toronto, ON, M5S 3G4, Canada
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Alizadeh Hossein
Department of Electrical and Computer Engineering, University of Toronto, Ontario M5S 3G4, Canada
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Kherani Nazir
Department of Electrical and Computer Engineering, University of Toronto, Toronto, ON, M5S 3G4, Canada
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