Effect of Film Microstructure on Diffusion Barrier Properties of TaNx Films in Cu Metallization

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概要

• 論文の詳細を見る

• TaNx thin films were deposited on Si substrates by inductively coupled plasma (ICP)-assisted DC magnetron sputtering. The diffusion barrier properties of the TaNx films were tested by heat treatment at different temperatures. It was found that the diffusion barrier properties of TaNx thin films could be significantly enhanced by controlling the microstructure of the film. Diffusion barrier properties were improved by depositing the TaNx films under conditions that produce amorphous films without grain boundaries, as grain boundaries may serve as diffusion paths for Cu atoms. The diffusion barrier properties of the TaNx films with an amorphous structure were found to be maintained after annealing at 1073 K, which is the highest temperature among the reported values.

• Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
• 2008-08-25

著者

• Lee Jung-Joong

  Plasma Surface Engineering Laboratory, School of Materials Science and Engineering, Seoul National University, Seoul 151-742, Korea

• Lee Gi-Rak

  Plasma Surface Engineering Laboratory, School of Materials Science and Engineering, Seoul National University, Seoul 151-742, Korea

• Kim Sung-Man

  Plasma Surface Engineering Laboratory, School of Materials Science and Engineering, Seoul National University, Seoul 151-742, Korea

関連論文

• Effect of Film Microstructure on Diffusion Barrier Properties of TaNx Films in Cu Metallization

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