Electron Spin Resonance of Defects Related to Thermal Conductivity in AlN Ceramics
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概要
- 論文の詳細を見る
Defects of AlN ceramics with a thermal conductivity from 102 to 216 W m-1 K-1 are investigated using electron spin resonance (ESR). Two ESR signals at $g=2.006$ and 1.999 are related to thermal conductivity. The $g=1.999$ signal intensity increases with a decrease in thermal conductivity, an increase in oxygen concentration, and an increase in Mg concentration. The $g=1.999$ signal is tentatively supposed to be caused by an electron-trapped center. The $g=2.006$ signal intensity is increased with an increase in thermal conductivity, a decrease in oxygen concentration, and an increase in Ca concentration. A defect responsible for the $g=2.006$ signal is assigned as a hole trapped in an ON–VAl complex.
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
- 2008-08-25
著者
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Kai Ayako
Division Of Materials Science And Engineering Yamaguchi University
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Miki Toshikatsu
Division Of Materials Science And Engineering Yamaguchi University
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Tomohiro Daisuke
Division of Materials Science and Engineering, Yamaguchi University, Ube, Yamaguchi 755-8611, Japan
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Kanechika Yukihiro
Advanced Materials Business Division, Tokuyama Corporation, Shunan, Yamaguchi 745-8649, Japan
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Kai Ayako
Division of Materials Science and Engineering, Yamaguchi University, Ube, Yamaguchi 755-8611, Japan
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Miki Toshikatsu
Division of Materials Science and Engineering, Yamaguchi University, Ube, Yamaguchi 755-8611, Japan
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