Characterization of Thermal Annealed n-ZnO/p-GaN/Al2O3
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概要
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This paper reports the effects of post thermal annealing in air and N2 on the structural and optical properties of zinc oxide (ZnO) films deposited on a p-GaN substrate. The properties of annealed ZnO/GaN/Al2O3 films were investigated by atomic force microscopy (AFM), X-ray diffraction (XRD), transmission electron microscopy (TEM), photoluminescence (PL), and Auger electron spectroscopy (AES). Our experiments demonstrated that the ZnO film annealed in N2 had better structural properties than as-deposited ZnO film. When annealed in air, the optical property of ZnO film was improved by the oxygen from ambient air, although the structural properties were somewhat poor and the interface of ZnO and GaN was degraded by the formation of a Ga–O mixed phase.
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
- 2008-08-25
著者
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LEE Ho
Materials and Devices Research Center, Samsung Advanced Institute of Technology
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KIM Young
Materials and Devices Research Center, Samsung Advanced Institute of Technology
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Lee Ju
Major of Semiconductor Physics, Korea Maritime University, Busan 606-791, Korea
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Kim Hong
Major of Semiconductor Physics, Korea Maritime University, Busan 606-791, Korea
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Kong Bo
Materials Science and Engineering, Sungkyunkwan University, Suwon 440-746, Korea
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Cho Hyung
Materials Science and Engineering, Sungkyunkwan University, Suwon 440-746, Korea
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Lee Ho
Materials Science & Metallurgy, Kyungpook National University, Daegu 7020701, Korea
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