Control of Chemical States on Locally Anode-Oxidized Si Surfaces

概要

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We have demonstrated that chemical states on the anode-oxidized Si surfaces prepared by atomic force microscopy (AFM) can be controlled by selecting the appropriate applied voltage for the oxidation. The frictional force on the oxidized surface formed at relatively low voltages (4.5–9 V) was large, whereas that at relatively high voltages (9–10 V) was small. This is due to a difference in the hydrophilicity of the surfaces. Octadecyltrichlorosilane (OTS) films were formed only on the oxidized surface prepared at the low voltages. Since OTS molecules require OH groups to form a film, the hydrophilicity originates from OH group termination of the surfaces. Therefore, the oxide surface is terminated with OH groups when the applied voltage is relatively low. When the applied voltage is relatively high, it is speculated that the oxide surface is covered with Si–O–Si groups instead of OH groups.
Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
2008-07-25