Structural, Electronic, and Optical Properties of InxGa1-xAs Alloys by Full Potential Linear Augmented Plane Wave Method

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概要

• 論文の詳細を見る

• Ab-initio calculations have been performed to determine the structural, electronic, and optical properties of InxGa1-xAs alloys for $x=0.0$, 0.25, 0.50, 0.75, and 1.0. The calculated lattice constants follow Vegard's law when we allow for relaxation of atomic positions. Our calculated dielectric function and critical points are in good qualitative agreement with experimental data. The critical point energies are fitted with a polynomial equation of indium concentration. The measured dielectric function and fitting parameters are in good agreement with our results. Our results will be useful for the design of optoelectronic devices using these materials.

• Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
• 2008-07-25

著者

• Kumar Sudhir

  Physics Department, Institute of Engineering and Technology, M.J.P. Rohilkhand University, Bareilly-243 006, India

• Maurya Tarun

  Physics Department, Institute of Engineering and Technology, M.J.P. Rohilkhand University, Bareilly-243 006, India

• Auluck S.

  Physics Department, Indian Institute of Technology, Kanpur-208016, India

関連論文

• Structural, Electronic, and Optical Properties of InxGa1-xAs Alloys by Full Potential Linear Augmented Plane Wave Method
• Erratum: "Structural, Electronic, and Optical Properties of InxGa1-xAs Alloys by Full Potential Linear Augmented Plane Wave Method"

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