Dependence of Extreme Ultraviolet Emission on Xenon Flow Rate from a $Z$-Pinch Discharge Plasma
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概要
- 論文の詳細を見る
Extreme ultraviolet (EUV) radiation with wavelengths of 11 to 14 nm is seen as the most promising candidate for a new lithographic technology. Compared to synchrotron radiation sources and laser produced plasmas, gas discharge produced plasma (GDPP) sources for EUV radiation are expected to offer lower cost of ownership. This paper describes the dependence of EUV emission on gas flow rate. Using xenon a broadband emission in the investigated wavelength range from 10 to 18 nm is observed. Very short current pulses were applied across the xenon-filled $Z$-pinch capillary (3 mm diameter and 5 mm length) to produce EUV radiation. A EUV radiation from the $Z$-pinch plasma was characterized, which is based on the temporal behavior of EUV intensity and the pinhole images.
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
- 2008-06-25
著者
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Katsuki Sunao
Department Of Electrical And Computer Engineering Kumamoto University
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Akiyama Hidenori
Department Of Electrical And Computer Engineering Faculty Of Engineering Kumamoto University
-
Cheng Yuanli
Department of Electrical Engineering/National Key Laboratory of Tunable Laser Technology, Harbin Institute of Technology, Harbin 150001, China
-
Zhang Chaohai
Department of Electrical Engineering/National Key Laboratory of Tunable Laser Technology, Harbin Institute of Technology, Harbin 150001, China
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Akiyama Hidenori
Department of Electrical and Computer Engineering, Kumamoto University, Kumamoto 860-8555, Japan
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