Incident Polarization Independence of Topographic Artifacts in Scattering-Type Near-Field Microscopy

スポンサーリンク

概要

• 論文の詳細を見る

• We demonstrate that topographic artifacts are independent of optical polarizations of incident light in reflection-mode scattering-type scanning near-field optical microscopy. Experiments were performed for incident p- and s-polarizations with respect to the incident plane of a diffraction grating. The experimental results show good agreement with the simulation images. This study may be useful for the investigation of the optical properties of nanostructures affected by incident polarizations in scattering-type near-field microscopy.

• Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
• 2008-06-25

著者

• Jhe Wonho

  Department Of Physics Seoul National University

• Ahn Joonmo

  Department of Physics and Astronomy, Seoul National University, Seoul 151-747, Korea

• Yu Young-Jun

  Department of Physics and Astronomy, Seoul National University, Seoul 151-747, Korea

• Chang Sungjin

  Department of Physics and Astronomy, Seoul National University, Seoul 151-747, Korea

• Jhe Wonho

  Department of Physics and Astronomy, Seoul National University, Seoul 151-747, Korea

関連論文

• Near-Field Photoluminescence of Si-doped GaAs
• Incident Polarization Independence of Topographic Artifacts in Scattering-Type Near-Field Microscopy

スポンサーリンク