Thick-Film Structure Geometry Effect on Carbon Nanotubes Synthesized by Chemical Vapor Deposition
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概要
- 論文の詳細を見る
In chemical vapor deposition (CVD) technology, the mass flow transport behaviors of precursor gases play an important role particularly in thick-film normal triode structures. The depth dimension of dielectric holes in thick-film normal triode structures may range from 10 to 50 μm. The relationship between carbon nanotube (CNT) synthesis and aspect ratio of dielectric holes is investigated in this work. In high-aspect-ratio dielectric holes (such as narrow and deep holes), precursor diffusion driven by concentration gradient must be combined with pumping assistance in order to force reactive gas to flow toward the catalyst at the bottom of dielectric holes for CNT growth.
- 2008-06-25
著者
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Chen Chia-fu
Department Of Materials Science And Engineering National Chiao Tung University
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Whang Wha-tzong
Department Of Materials Science And Engineering National Chiao Tung University
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Chen Kuang-Chung
Department of Materials Science and Engineering, National Chiao Tung University, Hsinchu, Taiwan 300, R.O.C.
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Chan Lih-Hsiung
Display Technology Center (DTC), Industrial Technology Research Institute (ITRI), Hsinchu, Taiwan 310, R.O.C.
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Chen Chia-Fu
Department of Materials Science and Engineering, National Chiao Tung University, Hsinchu, Taiwan 300, R.O.C.
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Chen Kuo-Feng
Display Technology Center (DTC), Industrial Technology Research Institute (ITRI), Hsinchu, Taiwan 310, R.O.C.
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Whang Wha-Tzong
Department of Materials Science and Engineering, National Chiao Tung University, Hsinchu, Taiwan 300, R.O.C.
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Lee Shu-Hsing
Display Technology Center (DTC), Industrial Technology Research Institute (ITRI), Hsinchu, Taiwan 310, R.O.C.
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Hwang Chian-Liang
Department of Materials Science and Engineering, National Tsing Hua University, Hsinchu, Taiwan 300, R.O.C.
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Tai Nyan-Hwa
Department of Materials Science and Engineering, National Tsing Hua University, Hsinchu, Taiwan 300, R.O.C.
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Lin Ming-Hung
Display Technology Center (DTC), Industrial Technology Research Institute (ITRI), Hsinchu, Taiwan 310, R.O.C.
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