Wet Etching of Heat Treated Atomic Layer Chemical Vapor Deposited Zirconium Oxide in HF Based Solutions

スポンサーリンク

概要

• 論文の詳細を見る

• Alternative materials are being considered to replace silicon dioxide as gate dielectric material. Of these, the oxides of hafnium and zirconium show the most promise. However, integrating these new high-$k$ materials into the existing complementary metal–oxide–semiconductor (CMOS) process remains a challenge. One particular area of concern is the wet etching of heat treated high-$k$ dielectrics. In this paper, work done on the wet etching of heat treated atomic layer chemical vapor deposited (ALCVD) zirconium oxide in HF based solutions is presented. It was found that heat treated material, while refractory to wet etching at room temperature, is more amenable to etching at higher temperatures when methane sulfonic acid is added to dilute HF solutions. Selectivity over SiO2 is still a concern.

• Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
• 2008-06-25

著者

• Raghavan Srini

  Department of Electrical and Computer Engineering, The University of Arizona, P.O. Box 210104, 1230 E Speedway Blvd, Tucson, AZ, 85721, U.S.A.

• Balasubramanian Sriram

  Department of Electrical and Computer Engineering, The University of Arizona, P.O. Box 210104, 1230 E Speedway Blvd, Tucson, AZ, 85721, U.S.A.

関連論文

• Wet Etching of Heat Treated Atomic Layer Chemical Vapor Deposited Zirconium Oxide in HF Based Solutions

スポンサーリンク