Electronic Structure, Electrical and Dielectric Properties of BaSnO3 below 300 K

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概要

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• The electronic structure, electrical and dielectric properties of barium stannate, a semiconducting perovskite oxide prepared by solid state ceramic route were studied by employing X-ray photoelectron spectroscopy (XPS), Mössbauer and impedance spectroscopic techniques in the temperature range 77–300 K. X-ray diffraction (XRD) pattern of BaSnO3 confirms the cubic structure. Scanning electron microscopy (SEM) images show high porosity in the sample and the average grain size was found to be about 1.85 μm which corroborates with the particle size obtained through XRD line broadening analysis. Mössbauer spectra, at 298 and 78 K reveal that tin exists mainly in tetravalent, Sn4+ state. XPS study also shows the same results but it indicates the existence of a trace amount of Sn2+. Electrical conductivity and dielectric constant of this system have been measured in the temperature range 298 to 148 K and in the frequency range $10^{-2}$ to $10^{6}$ Hz. Frequency and temperature dependent electrical conductivity/dielectric properties have been used to separate the contributions of grains and grain boundaries to the total observed conductivity and dielectric constant. Orientational polarisation and space charge polarisation contributes to the observed dielectric properties of the system.

• 2008-05-25

著者

• Singh Prakash

  Department Of Ceramic Engineering Institute Of Technology Banaras Hindu University

• Kumar Devendra

  Department Of Ceramic Engineering Institute Of Technology Banaras Hindu University

• Parkash Om

  Department Of Ceramic Engineering Institute Of Technology Banaras Hindu University

• Brandenburg Benjamin

  Institut für Physikalische Chemie, Westfalische Wilhelms-Universität Münster, Corrensstrasse 30, 48149 Münster, Germany

• Singh Prabhakar

  Department of Applied Physics, Institute of Technology, Banaras Hindu University, Varanasi-221005 India

• Sebastian C.

  Institut für Anorganische und Analytische Chemie and NRW Graduate School of Chemistry, Westfalische Wilhelms-Universität Münster, Corrensstrasse 30, 48149 Münster, Germany

• Singh Sindhu

  Department of Ceramic Engineering, Institute of Technology, Banaras Hindu University, Varanasi-221005 India

• Sebastian C.

  Institut für Anorganische und Analytische Chemie and NRW Graduate School of Chemistry, Westfalische Wilhelms-Universität Münster, Corrensstrasse 30, 48149 Münster, Germany

• Singh Prakash

  Department of Ceramic Engineering, Institute of Technology, Banaras Hindu University, Varanasi-221005 India

• Kumar Devendra

  Department of Ceramic Engineering, Institute of Technology, Banaras Hindu University, Varanasi-221005 India

関連論文

• Barrier Layers Formation in Tin Substituted Calcium Copper Titanate CaCu_3Ti_Sn_xO_ (0≤x≤1.0)(Condensed matter: electronic structure and electrical, magnetic, and optical properties)
• Electronic Structure, Electrical and Dielectric Properties of BaSnO3 below 300 K

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