Barrier Layers Formation in Tin Substituted Calcium Copper Titanate CaCu_3Ti_<4-x>Sn_xO_<12> (0≤x≤1.0)(Condensed matter: electronic structure and electrical, magnetic, and optical properties)

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概要

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• A few compositions in the system CaCu_3Ti_<4-x>Sn_xO_3 (0≤x≤1.0) were synthesized by solid state diffusion controlled thermochemical process. Powder X-ray diffraction patterns of all the compositions show that these compositions are single phase solid solution. All the samples have cubic crystal structure similar to undoped CaCu_3Ti_4O_<12>. Microstructure shows that average grain size is about 10μm. Dielectric measurements have been carried out in the temperature and frequency range 300-450K and 1kHz-1MHz, respectively. It has been shown by complex plane impedance and modulus analysis that barrier layers form at grain boundaries in these materials. These barriers impart high value of dielectric constant to the resultant ceramic. Dielectric constant, ε_r can be enhanced and dielectric loss (loss tangent), D can be reduced further by chemical infiltration.

• 社団法人日本物理学会の論文
• 2006-09-15

著者

• Yadav Bhoomika

  Department Of Ceramic Engineering Institute Of Technology Banaras Hindu University

• Singh Prakash

  Department Of Ceramic Engineering Institute Of Technology Banaras Hindu University

• PARKASH Om

  Department of Ceramic Engineering, Institute of Technology, Banaras Hindu University

• KUMAR Devendra

  Department of Ceramic Engineering, Institute of Technology, Banaras Hindu University

• Kumar Devendra

  Department Of Ceramic Engineering Institute Of Technology Banaras Hindu University

• Parkash Om

  Department Of Ceramic Engineering Institute Of Technology Banaras Hindu University

関連論文

• Barrier Layers Formation in Tin Substituted Calcium Copper Titanate CaCu_3Ti_Sn_xO_ (0≤x≤1.0)(Condensed matter: electronic structure and electrical, magnetic, and optical properties)
• Electronic Structure, Electrical and Dielectric Properties of BaSnO3 below 300 K

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