Fabrication of Transmit–Receive Devices Monolithically Integrated with Semiconductor Optical Amplifier

概要

論文の詳細を見る
Transmit–receive devices (TRD) monolithically integrated with a butt-coupled semiconductor optical amplifier (SOA) have been designed and fabricated using a buried ridge/ridge waveguide structure with low-threshold-current and high-temperature operation characteristics. The maximum output power was 31 mW under CW operation at 25 °C. At 85 °C the output power was over 9 mW with a side mode suppression of over 45 dB. The responsivity of the detector photodiode was over 0.6 A/W in the temperature range between 25 and 65 °C and over 0.3 A/W at 85 °C. It was nearly constant in the input-power range between $-30$ to $-10$ dBm.
Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
2008-05-25