Fabrication of Bi Nanowire Array into Nanoporous Film Made from Phase-Separated Al–Si Film
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概要
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Ultrahigh-pore-density nanoporous films with a pore diameter less than 10 nm and a pore density exceeding $10^{16}$ pores/m2 have been fabricated by the phase separation of an Al–Si system and the subsequent removal of Al cylinders, for use in the template-assisted growth of Bi nanowire arrays. Bi was used to fill the pores of template films by electrodeposition. The temperature dependence of the resistance of the obtained Bi nanowires with a diameter of 9 nm, parallel to the Bi nanowire growth direction, exhibits a semimetal-to-semiconductor transition due to the quantum confinement effect.
- 2008-04-25
著者
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Den Tohru
Canon Research Center
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Fukutani Kazuhiko
Canon Research Center, Canon Inc., 30-2 Shimomaruko 3-chome, Ota-ku, Tokyo 146-8501, Japan
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