Direct Patterning of Silicon Nitride Thin Film by Projection Photoablation for Fabricating Thin-Film Transistor Liquid Crystal Displays
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概要
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The direct patterning of silicon nitride (SiNx) thin films on glass substrates using a KrF 248 nm excimer laser has been investigated. The direct laser patterning process offers a cost-effective alternative to wet- and dry-etch lithographies for the fabrication of thin-film transistor liquid crystal displays (TFT-LCDs). It is demonstrated that direct laser patterning can effectively pattern 200 nm SiNx thin films at the laser energy density of 1350 mJ/cm2. We can therefore reduce the cost and process time by using excimer laser patterning and eliminating the need for wet- and dry-etch processes.
- 2008-04-25
著者
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Wu Gwo-Mei
Institute of Electro-Optical Engineering, Department of Electronic Engineering, Chang Gung University, Kweisan, Taoyuan 333, Taiwan, R.O.C.
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Jean Hao-Wen
Institute of Electro-Optical Engineering, Department of Electronic Engineering, Chang Gung University, Kweisan, Taoyuan 333, Taiwan, R.O.C.
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Feng Wu-Shiung
Institute of Electro-Optical Engineering, Department of Electronic Engineering, Chang Gung University, Kweisan, Taoyuan 333, Taiwan, R.O.C.
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Chen Chao-Nan
Institute of Electro-Optical Engineering, Department of Electronic Engineering, Chang Gung University, Kweisan, Taoyuan 333, Taiwan, R.O.C.
関連論文
- Direct Patterning of Silicon Nitride Thin Film by Projection Photoablation for Fabricating Thin-Film Transistor Liquid Crystal Displays
- Effect of Excitonic Interactions on Abnormal Luminescence Behaviour of InGaN/GaN Light-Emitting Diodes with Electron Tunneling Layer