AlGaN/GaN High Electron Mobility Transistors Grown on 150 mm Si(111) Substrates with High Uniformity

概要

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AlGaN/GaN high electron mobility transistors (HEMTs) grown on 150 mm Si(111) substrates are reported in this work. The sheet resistance of the AlGaN/GaN HEMT structure is as low as $260 \pm 3.4$ $\Omega$/$\square$. The electron mobility is in the range of 1560–1650 cm2 V-1 s-1. The crack-free mirror-like wafers were obtained by using a simple AlGaN/AlN buffer. The mechanism for dislocation reduction in GaN above the AlGaN/AlN buffer is presented in this work. The dislocation density is around $(1.5--2.5)\times 10^{9}$/cm2. Some of the wafers were processed and a current density close to 1 A/mm was achieved. The maximum transconductance was 270 mS/mm and the on-state resistance was as low as 2.6 $\Omega$ mm.
Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
2008-03-25