Mechanism Underlying Damage Induced in Gallium Nitride Epilayer during Laser Lift-Off Process

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概要

• 論文の詳細を見る

• A vertical-type gallium nitride blue light-emitting diode on silicon was prepared by using a laser lift-off process. A grid like surface was obtained after the laser lift-off process. The central part of the grid preserves a uniform surface morphology, but damage occurred and a crack was formed on the peripheral area of a grid. Though a comparison of the crystalline and optical properties of the central and peripheral areas, the high thermal gradient of the peripheral area under pulse laser shot irradiation was found to play an important role during the laser lift-off process.

• Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
• 2008-02-25

著者

• Tu Sheng-han

  Department Of Optics And Photonics National Central University

• Lee Yeeu-chang

  Department Of Mechanical Engineering Chung Yuan Christian University

• Liu Cheng-Yi

  Department of Chemical and Materials Engineering, National Central University, Jhongli, Taiwan 32001, R.O.C.

• Lee Ko-Tao

  Department of Optics and Photonics, National Central University, Jhongli, Taiwan 32001, R.O.C.

• Lin Ching-Liang

  Department of Chemical and Materials Engineering, National Central University, Jhongli, Taiwan 32001, R.O.C.

• Chen Po-Hen

  Department of Chemical and Materials Engineering, National Central University, Jhongli, Taiwan 32001, R.O.C.

• Chang Jeng-Yang

  Department of Optics and Photonics, National Central University, Jhongli, Taiwan 32001, R.O.C.

• Lee Yeeu-Chang

  Department of Mechanical Engineering, Chung Yuan Christian University, Jhongli, Taiwan 32023, R.O.C.

• Tu Sheng-Han

  Department of Optics and Photonics, National Central University, Jhongli, Taiwan 32001, R.O.C.

関連論文

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• New Collection Systems for Multi LED Light Engines
• Mechanism Underlying Damage Induced in Gallium Nitride Epilayer during Laser Lift-Off Process

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