Electron Trap Level of Cu-Doped ZnO

スポンサーリンク

概要

• 論文の詳細を見る

• The electron trap level of Cu-doped ZnO has been investigated. Films with Cu contents from 0.01 to 1 at. % were deposited by RF magnetron sputtering onto (0001)-oriented sapphire substrates at 300 °C, and annealed at 900 °C. The resistivity of these films was high and increased with increasing Cu content. Hall measurements carried out at high temperatures of approximately 400 °C showed exponential temperature dependence. The results were analyzed assuming that donors and electron traps coexist. The electron trap energy level was determined to be in the 0.30–0.35 eV range below the conduction band edge.

• Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
• 2008-12-25

著者

• Furukawa Akio

  Department of Electrical Engineering, Tokyo University of Science, Noda, Chiba 278-8510, Japan

• Furukawa Akio

  Department of Biological Sciences, Faculty of Science, Nara Women's University

• Tokunaga Takahiro

  Department of Electrical Engineering, Tokyo University of Science, Noda, Chiba 278-8510, Japan

• Ogasawara Naoto

  Department of Electrical Engineering, Tokyo University of Science, Noda, Chiba 278-8510, Japan

• Yokozawa Ryoji

  Department of Electrical Engineering, Tokyo University of Science, Noda, Chiba 278-8510, Japan

関連論文

• The role of adventitious roots in supplying water to Ipomoea pes-caprae
• Diel changes in the CO_2 exchange rates of reproductive organs of the tropical tree Durio zibethinus
• Phenological characteristics of reproduction and seed formation in Durio zibethinus Murray
• The Role of Contrast Enhanced MRI in the Diagnosis of Non-Mass Image-Forming Lesions on Breast Ultrasonography
• Theory of Multiple Polynomial Remainder Sequence
• An Uncommon Case of Diabetic Mastopathy in Type II Non-Insulin Dependent Diabetes Mellitus
• Electron Trap Level of Cu-Doped ZnO

スポンサーリンク