Laser Induced Effects in the Laser Etched Silicon Nanostructures

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概要

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• Laser induced effects are studied in the silicon nanostructures, prepared by laser etching technique, in terms of heating effect and photo-excited Fano effect. Theoretical calculation shows that temperature rise is almost negligible for laser power density of 4.0 kW/cm2 or less. Raman spectroscopy is employed to study anharmonic effect and electron–phonon (Fano) interaction in the nanostructures of silicon. Photo-excited electrons interact with the Raman active optical phonons before the heating related effects dominate. A combination of Fano and heating effect is observed at high laser power density.

• Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
• 2008-11-25

著者

• Kumar Rajesh

  Departments Of Radiodiagnosis Sanjay Gandhi Post-graduate Institute Of Medical Sciences

• Shukla Aniruddha

  Department of Physics, Indian Institute of Technology, Hauz Khas, New Delhi 110016, India

• Joshi Bipin

  Department of Applied Sciences and Humanities, Jamia Millia Islamia, New Delhi 110025, India

• Islam Saikh

  Department of Applied Sciences and Humanities, Jamia Millia Islamia, New Delhi 110025, India

• Kumar Rajesh

  Department of Physics, Indian Institute of Technology, Hauz Khas, New Delhi 110016, India

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