Gap-Dependent Terahertz Pulses from Mid-Size-Gap Multi-Energy Arsenic-Ion-Implanted GaAs Antennas

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概要

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• We investigated the characteristics of sub-picosecond radiation pulses from mid-size-gap multi-energy arsenic-ion-implanted GaAs photoconductive antennas in terahertz time-domain spectroscopy experiments. At fixed fluence excitation, both the bandwidth and the negative peak of terahertz waveform minimum reveal increasing trends with increases in the antenna's gap. We reproduce both the measured terahertz waveforms and increasing trends numerically, by calculating a model that incorporates the trap-enhanced bias field with wave equation. We deduce from our simulation that the gap-dependent behavior stems from the fact that an antenna with a larger gap has a stronger trap-enhanced bias field near the anode edge and thereby induces a larger space-charge screening effect and bandwidth.

• Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
• 2008-11-25

著者

• Pan Ci-Ling

  Department of Photonics and Institute of Electro-Optical Engineering, National Chiao Tung University, 1001 Ta Hsueh Road, Hsinchu 300, Taiwan, R.O.C.

• Chou Rone-Hwa

  Department of Photonics and Institute of Electro-Optical Engineering, National Chiao Tung University, 1001 Ta Hsueh Road, Hsinchu 300, Taiwan, R.O.C.

関連論文

• Optoelectronic Phase-Tracking and Waveform Display of Microwave Signals up to 8 GHz Using Gain-Switched Laser Diodes
• Fabrication of Terahertz Planar Metamaterials Using a Super-Fine Ink-Jet Printer
• Gap-Dependent Terahertz Pulses from Mid-Size-Gap Multi-Energy Arsenic-Ion-Implanted GaAs Antennas

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