Recombination Behaviour at the Ultrathin Polypyrrole Film/Silicon Interface Investigated by In-situ Pulsed Photoluminescence

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概要

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• We investigated the change in Si surface recombination behaviour during the electrodeposition of ultrathin polypyrrole (PPy) films onto Si surfaces by means of in-situ pulsed photoluminescence (PL) spectroscopy. The quenching of the band-gap related PL is lower (better passivation) when the electrodeposition is performed in a less acidic solution by use of potential pulse sequences. In-situ infrared spectroscopic ellipsometry (IR-SE) was applied for the first time to PPy electrodeposition. IR-SE and PL measurements confirm negligible formation of SiOx species at the Si/PPy interface although aqueous electrolytes were used.

• 2008-01-25

著者

• Rappich Jorg

  Hahn-meitner-institut Abt.photovoltaik Rudower Chaussee 5

• Hinrichs Karsten

  ISAS—Institute for Analytical Sciences, Department Berlin, Albert-Einstein-Str. 9, 12489 Berlin, Germany

• Intelmann Carl

  Hahn-Meitner-Institut Berlin GmbH, Department Silicon Photovoltaics, Kekuléstrasse 5, 12489 Berlin, Germany

• Hinrichs Karsten

  ISAS—Institute for Analytical Sciences, Department Berlin, Albert-Einstein-Str. 9, 12489 Berlin, Germany

• Syritski Vitali

  Department of Materials Science, Tallinn University of Technology, Ehitajate tee 5, 19086 Tallinn, Estonia

• Yang Florent

  Hahn-Meitner-Institut Berlin GmbH, Department Silicon Photovoltaics, Kekuléstrasse 5, 12489 Berlin, Germany

• Intelmann Carl

  Hahn-Meitner-Institut Berlin GmbH, Department Silicon Photovoltaics, Kekuléstrasse 5, 12489 Berlin, Germany

• Yang Florent

  Hahn-Meitner-Institut Berlin GmbH, Department Silicon Photovoltaics, Kekuléstrasse 5, 12489 Berlin, Germany

関連論文

• In Situ Photoluminescence Analysis of Nonradiative Recombination on Silicon Surfaces Treated in Fluoride Solution
• Recombination Behaviour at the Ultrathin Polypyrrole Film/Silicon Interface Investigated by In-situ Pulsed Photoluminescence

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