In Situ Photoluminescence Analysis of Nonradiative Recombination on Silicon Surfaces Treated in Fluoride Solution

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概要

• 論文の詳細を見る

• Recombination at p-type Si(100) surfaces electrochemically treated in NH_4F solution is investigated in situ by photoluminescence (PL) under excitation with short pulses of a N_2-laser. By registration of the integrated PL intensity we detect sensitively changes in the surface defect concentration. Periodic variations of the nonradiative recombination rate during electropolishing in the oscillating regime together with surface passivation by hydro-genation are observed. The estimated density of the surface nonradiative centers changes from 10^13 cm^-2 duringthe electropolishing to 5×1O^<10> cm^<-2> for quiescent hydrogenated surfaces.

• 社団法人応用物理学会の論文
• 1997-01-15

著者

• Dittrich Thomas

  Technische Universitat Munchen Physik Department E16

• TIMOSHENKO Victor

  Faculty of Physics, M. V. Lomonosov Moscow State University

• RAPPICH Jorg

  Hahn-Meitner-Institut, Abt.Photovoltaik, Rudower Chaussee 5

• Rappich Jorg

  Hahn-meitner-institut Abt.photovoltaik Rudower Chaussee 5

• Timoshenko Victor

  Faculty Of Physics M. V. Lomonosov Moscow State University

関連論文

• In Situ Photoluminescence Analysis of Nonradiative Recombination on Silicon Surfaces Treated in Fluoride Solution
• Recombination Behaviour at the Ultrathin Polypyrrole Film/Silicon Interface Investigated by In-situ Pulsed Photoluminescence

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