Crystal Growth of Magnetoelectric Cr2O3 Thin Film on Sapphire and SrTiO3

概要

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Representative magnetoelectric (ME) material Cr2O3 films were prepared on $R$-cut sapphire ($R$-Al2O3) and SrTiO3 (STO) substrates with the aim of applying them in perovskite oxide electronic devices. Cr2O3 thin films were deposited using the DC–RF hybrid magnetron sputtering system at different substrate temperatures. When the $R$-Al2O3 substrate temperature was 550 °C, Bragg peaks $(n,\bar{n},0,2n)$ were observed. The full width at half maximum (FWHM) of the rocking curve was smallest at $T_{\text{s}} = 550$ °C with a value of 0.52°. The grain size of Cr2O3 increased with substrate temperature in the 400–600 °C range. The lengths of rectangular Cr2O3 grains were in the ranges of 200–600 nm along the $[\bar{1}101]$ direction and 100–300 nm along the $[11\bar{2}0]$ direction. Furthermore, Cr2O3 films were deposited on SrTiO3 (100) with CeO2 buffer layers. The Cr2O3 thin film deposited on the smooth CeO2 buffer layers with the average roughness $(R_{\text{a}}) = 0.41$ nm showed a $c$-axis orientation; moreover, a $\text{Cr$_{2}$O$_{3}$(0001)/CeO$_{2}$(100)}\parallel\text{STO(100)}$ crystal relationship was obtained.
Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
2008-01-25