Indium Phosphide Nanoneedles on Non-single Crystalline Semiconductor Surfaces
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概要
- 論文の詳細を見る
We demonstrated a route to synthesize high-quality epitaxial nanometer-scale structures on non-single crystalline semiconductor surfaces formed on amorphous substrates. We chose indium phosphide (InP) for a material of nanometer-scale structures and various hydrogenated silicon (Si:H) films for non-single crystalline semiconductor surfaces. With the presence of gold nanoparticles, the InP grew into nearly one-dimensional nanometer-scale structures, nanoneedles, with a wide base on one end and a sharp tip on the other end. The Si:H films and the prepared InP nanoneedles were studied in terms of their chemical, structural and optical properties.
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
- 2007-09-30
著者
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Williams R.
Quantum Science Research, Hewlett-Packard Laboratories, 1501 Page Mill Road Palo Alto, CA 94304, U.S.A.
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Wang Shih-Yuan
Quantum Science Research, Hewlett-Packard Laboratories, 1501 Page Mill Road Palo Alto, CA 94304, U.S.A.
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Santori Charles
Quantum Science Research, Hewlett-Packard Laboratories, 1501 Page Mill Road Palo Alto, CA 94304, U.S.A.
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Kobayashi Nobuhiko
Jack Baskin School of Engineering, University of California, Santa Cruz, 1156 High Street, Santa Cruz, CA 95064, U.S.A.