Determination of SiO2 Thickness at the Interface of ZnO/Si by Ellipsometry

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概要

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• When a ZnO thin film was deposited on a Si substrate and annealed, a thin layer of silicon oxide was formed at the interface. To determine the thickness of this silicon oxide layer, a four-phase model was used in the ellipsometric fittings. The effect of the layer thickness $d_{\text{SiO$_{2}$}}$ on the spectral fittings was studied. The result shows that, after annealing at 900 °C, $d_{\text{SiO$_{2}$}}$ could be approxiamtely 1.5 nm, which decreases the calculated refractive index ($n$) by 0.06–0.07.

• Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
• 2007-09-15

著者

• Hsieh Jang-Hsing

  Department of Materials Engineering, Mingchi University of Technology, Taishan, Taipei 24301, Taiwan

• Tung Siew

  Singapore Institute of Manufacturing Technology, 71 Nanyang Drive, Singapore 638075

• Liu Yuchan

  Singapore Institute of Manufacturing Technology, 71 Nanyang Drive, Singapore 638075

関連論文

• Determination of SiO2 Thickness at the Interface of ZnO/Si by Ellipsometry

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