Substrate Dependent Low-Temperature Growth of Thin Ag Films: Study on Si(111)–In Surfaces

概要

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The growth behaviors of thin Ag films using different substrate surfaces [Si(111) $7\times 7$, Si(111) $\sqrt{3}\times\sqrt{3}$–In, Si(111) $\sqrt{31}\times\sqrt{31}$–In, and Si(111) $4\times 1$–In] are modified. In the experiments, the two-step growth process consisting of low-temperature deposition of a metal followed by a mild annealing is employed to form Ag films. Scanning tunneling microscopy measurements reveal the formation of three-dimensional islands for Si(111) $\sqrt{31}\times\sqrt{31}$–In and layer-by-layer growths on all the other surfaces. Ag growth on the Si(111) $4\times 1$–In is highly anisotropic due to the indium chain arrays on the substrate. Two kinds of critical thickness, which is the minimum film thickness required to form a stable layer, are defined according to a previous work [C.-S. Jiang et al.: Surf. Sci. 518 (2002) 63]. Among the three surfaces that exhibit layer-by-layer growths, Si(111) $7\times 7$ has the largest critical thickness, followed by Si(111) $4\times 1$–In and Si(111) $\sqrt{3}\times\sqrt{3}$–In in descending order. The results are discussed both in terms of geometric effects of the surface atomic structures and within the framework of the electronic growth model.
Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
2007-09-15