Electrical Characterization of Ti–Silicate Films Grown by Atomic Layer Chemical Vapor Deposition

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概要

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• Electrical characterization was performed for Ti–silicate films, which were deposited by atomic layer chemical vapor deposition (ALCVD). Before the deposition of Ti–silicate films, the silicon substrates were pretreated differently using hydrofluoric acid (HF)-etching, chemical oxidation, and thermal oxidation. Regardless of the pretreatment methods, the grown films showed a highly smooth surface with rms below 0.52 nm. The electrical properties of the grown Ti–silicate films showed a strong dependence on the substrate pretreatments. The 5-nm-thick Ti–silicate films grown on hydrogen-passivated Si and chemically oxidized Si showed rather high leakage currents, whereas the films grown on thermally oxidized Si showed low leakage currents below $1\times 10^{-7}$ A/cm2 at a bias of $-1$ V. All of the films showed a positive shift in the flatband voltage ($V_{\text{FB}}$) upon annealing. Also, each film showed low a hysteresis below 180 mV and the hysteresis decreased upon annealing.

• Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
• 2007-08-15

著者

• Lee Seungjae

  Surface Chemistry Laboratory of Electronic Materials, Department of Chemical Engineering, Pohang University of Science and Technology (POSTECH), San 31, Hyoja-dong, Nam-gu, Pohang, Kyunbuk 790-784, Korea

• Yong Kijung

  Surface Chemistry Laboratory of Electronic Materials, Department of Chemical Engineering, Pohang University of Science and Technology (POSTECH), San 31, Hyoja-dong, Nam-gu, Pohang, Kyunbuk 790-784, Korea

関連論文

• Electrical Characterization of Ti–Silicate Films Grown by Atomic Layer Chemical Vapor Deposition

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