32 nm Pattern Collapse Modeling with Radial Distance and Rinse Speed

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概要

• 論文の詳細を見る

• Chemically amplified resist materials are now available to reach critical dimensions of the pattern close to the 32 nm node. Pattern collapse is a very serious problem in fine patterning of less than 32 nm critical dimension, because it decreases the yield. The pattern collapse is the pattern response to unbalanced capillary forces acting on the pattern walls during the spinning rinse step after the development process. Centrifugal force has not been considered in pattern collapse modeling up to now, so that pattern collapse due to spinning is studied. In this study, we investigated the 32 nm node pattern collapse mechanism with radial distance and rinse speed of dense patterns. In the process of creating the simulation tool, the rotating model is used. As rinse speed and radial distance are increased, the critical aspect ratio is decreased. As a result, the pattern collapse is increased.

• Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
• 2007-08-15

著者

• Oh Hye-Keun

  Lithography Laboratory, Department of Applied Physics, Hanyang University, Ansan 426-791, Korea

• An Ilsin

  Lithography Laboratory, Department of Applied Physics, Hanyang University, Ansan 426-791, Korea

• Kim Jong-Sun

  Lithography Laboratory, Department of Applied Physics, Hanyang University, Ansan 426-791, Korea

• Chang Wook

  Lithography Laboratory, Department of Applied Physics, Hanyang University, Ansan 426-791, Korea

関連論文

• 32 nm Pattern Collapse Modeling with Radial Distance and Rinse Speed
• Study of Temperature Behaviors for a Pellicle in Extreme-Ultraviolet Lithography: Mesh Structure

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