Molecular Hydrogen in Amorphous Silicon with High Internal Stress
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概要
- 論文の詳細を見る
Hydrogenated amorphous silicon with high compressive stress and hydrogen concentration as high as the hydrogen solubility limit has been studied. The concentrations of total hydrogen and bonded hydrogen have been determined by nuclear reaction analysis and infrared transmission spectroscopy, respectively. The amount of molecular hydrogen has been estimated as a difference between these two concentrations. Silicon ion implantation has been used to transform the hydrogen molecules into silicon-bonded hydrogen. The sensitivity of the Fourier transform infrared spectrometer to the expected variations in the bonded hydrogen concentration has been proved using hydrogen implantation. It has been concluded that in spite of high hydrogen content in the material the concentration of molecular hydrogen in the studied films is below 1 at. % and is not the reason for the high internal stress.
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
- 2007-08-15
著者
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Grambole Dieter
Research Center Rossendorf Inc. Institute Of Ion Beam Physics And Materials Research
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Danesh Parvaneh
Institute Of Solid State Physics Bulgarian Academy Of Sciences
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Pantchev Blagoy
Institute Of Solid State Physics Bulgarian Academy Of Sciences
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Schmidt Bernd
Research Center Dresden-Rossendorf Inc., Institute of Ion Beam Physics and Materials Research, P. O. Box 51 01 19, D-01314 Dresden, Germany
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Danesh Parvaneh
Institute of Solid State Physics, Bulgarian Academy of Sciences, Tzarigradsko Chaussee 72, 1784 Sofia, Bulgaria
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Pantchev Blagoy
Institute of Solid State Physics, Bulgarian Academy of Sciences, Tzarigradsko Chaussee 72, 1784 Sofia, Bulgaria
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PANTCHEV Blagoy
Institute of Solid State Physics
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Grambole Dieter
Research Center Dresden-Rossendorf Inc., Institute of Ion Beam Physics and Materials Research, P. O. Box 51 01 19, D-01314 Dresden, Germany
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- Molecular Hydrogen in Amorphous Silicon with High Internal Stress