Air-Stable Operation of Organic Field-Effect Transistors on Plastic Films Using Organic/Metallic Hybrid Passivation Layers
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概要
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We investigated the stability of organic field-effect transistors (FETs) under ambient conditions. By employing organic/metallic hybrid passivation layers, we improved the electric stability of organic FETs in air. Pentacene FETs were fabricated on plastic films and encapsulated in organic/metallic hybrid passivation layers. These FETs exhibited a high mobility of 0.6 cm2 V-1 s-1 and an on/off ratio greater than $10^{6}$. When the devices were stored in air for two months, the change in mobility was less than 2%. When continuous source–drain and gate voltages of $-40$ V were applied to the FETs for 10 days in air, the change in saturation current was less than 5%. We performed bending and heating tests in air. The FETs retained their functionality after being bent with a bending radius of less than 1 mm, and exhibited no changes in the performance after being subjected to a number of heat cycles up to 160 °C. The organic/metallic hybrid passivation layer is also effective in reducing air degradation of n-type organic FETs.
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
- 2007-07-15
著者
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Sekitani Tsuyoshi
Quantum-phase Electronics Center School Of Engineering The University Of Tokyo
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Someya Takao
Quantum Phase Electronics Center, School of Engineering, The University of Tokyo, 7-3-1 Hongo, Bunkyo-ku, Tokyo 113-8656, Japan
関連論文
- Bending Effect of Organic Field-Effect Transistors with Polyimide Gate Dielectric Layers
- Bending and recovery tests of organic field-effect transistors
- Hall effect measurements of polycrystalline pentacene TFTs with double gate structures
- Hall effect of polycrystalline pentacene field-effect transistors on plastic films
- Air-Stable Operation of Organic Field-Effect Transistors on Plastic Films Using Organic/Metallic Hybrid Passivation Layers