Temperature Dependence of the Subthreshold Characteristics of Dynamic Threshold Metal–Oxide–Semiconductor Field-Effect Transistors and Its Application to an Absolute-Temperature Sensing Scheme for Low-Voltage Operation
スポンサーリンク
概要
- 論文の詳細を見る
In this report the author proposes an absolute-temperature sensing scheme based on the temperature dependence of the subthreshold current–voltage characteristics of dynamic threshold metal–oxide–semiconductor (DTMOS) field-effect transistor devices. The proposed sensing scheme requires neither a voltage higher than 0.5 V nor initial precise calibration. It is suitable for silicon-on-insulator (SOI) circuits based on the SOI technology using an SOI substrate, but it can also be easily applied to bulk MOS devices.
- 2007-07-15
著者
関連論文
- Impact of Substrate Bias on Fixed-Pattern-Noise in Active Pixel Sensor Cells
- Test Circuit for Evaluating Characteristics Mismatch in Metal–Oxide–Semiconductor Field-Effect Transistor Pairs by Estimating Conductance Variation through Voltage Measurement
- Feasibility Study of a Novel Four Transistor Silicon-on-Insulator Static Random Access Memory Cell Utilizing Partial Trench Isolation
- Temperature Dependence of the Subthreshold Characteristics of Dynamic Threshold Metal–Oxide–Semiconductor Field-Effect Transistors and Its Application to an Absolute-Temperature Sensing Scheme for Low-Voltage Operation