Nitrogen Incorporation into Hafnium Oxide Films by Plasma Immersion Ion Implantation

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概要

• 論文の詳細を見る

• The physics and effects of nitrogen incorporation into hafnium oxide (HfO2) films were studied in detail. We found that only a trace amount (${\sim}5$%) of nitrogen can be introduced into the HfO2 films by plasma immersion ion-implantation, regardless of implantation dose. We proposed that the nitrogen incorporation is mainly due to the filling of O vacancies in the as-deposited HfO2 films and the nitridation of silicide bonds at the HfO2/Si interface. Temperature-dependent capacitance–voltage and current–voltage characteristics measurements indicate that both interface and oxide trap densities were greatly reduced as the results of the nitrogen filling of the O-vacancies and the nitridation of interfacial hafnium silicide bonds.

• 2007-05-30

著者

• Huang A.

  Department Of Civil Engineering National Chiao Tung University

• Yang B.

  Department Of Physiology College Of Dentistry And Dental Research Institute Seoul National University

• Wong Hei

  Department of Electronic Engineering, City University of Hong Kong, Tat Chee Avenue, Hong Kong

• Chu P.

  Department of Applied Physics, City University of Hong Kong, Hong Kong

• Filip V.

  Department of Electronic Engineering, City University of Hong Kong, Tat Chee Avenue, Hong Kong

• Sarkar C.

  Department of Electronics and Telecommunication Engineering, Jadavpur University, Kolkata, India

• Sen Banani

  Department of Electronic Engineering, City University of Hong Kong, Tat Chee Avenue, Hong Kong

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