Explicit Compact Surface-Potential and Drain-Current Models for Generic Asymmetric Double-Gate Metal–Oxide–Semiconductor Field-Effect Transistors

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概要

• 論文の詳細を見る

• In this paper, explicit surface potentials for undoped asymmetric-double-gate (a-DG) metal–oxide–semiconductor field-effect transistors (MOSFETs) suitable for compact model development are presented for the first time. The model is physically derived from Poisson's equation in each region of operation and adopted in a unified regional approach. The proposed model is physically scalable with oxide/channel thicknesses and has been verified with generic implicit solutions for independent gate biases as well as for different gate/oxide materials. The model is extendable to silicon-on-insulator (SOI) and symmetric-DG (s-DG) MOSFETs. Finally, a continuous, explicit drain-current equation has been derived on the basis of the developed explicit surface-potential solutions.

• Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
• 2007-04-30

著者

• Zhou Xing

  School of Electrical and Electronic Engineering, Nanyang Technological University, Nanyang Avenue, Singapore 639798

• Zhou Xing

  School of Electrical and Electronic Engineering, Nanyang Technological University, Singapore 639798

• Zhu Zhaomin

  School of Electrical and Electronic Engineering, Nanyang Technological University, Singapore 639798

• Chandrasekaran Karthik

  School of Electrical and Electronic Engineering, Nanyang Technological University, Singapore 639798

• Rustagi Subhash

  Institute of Microelectronics, 11 Science Park Road, Singapore Science Park II, Singapore 117685

• See Guan

  School of Electrical and Electronic Engineering, Nanyang Technological University, Singapore 639798

関連論文

• Explicit Compact Surface-Potential and Drain-Current Models for Generic Asymmetric Double-Gate Metal–Oxide–Semiconductor Field-Effect Transistors

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