Control of the Harmonics Generation in a Capacitively Coupled Plasma Reactor

概要

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The resonant growth of harmonics was observed in a dual-frequency capacitively coupled plasma etcher. The resonances of the second, third, and fourth harmonics of the bias RF were observed through current and voltage measurements. A fine tuning of the wafer-electrode reactance revealed that the reactance is the dominant factor controlling harmonic amplitude. The resonances take place when the sum of the wafer-electrode and plasma reactances reaches its minimum value at the harmonic frequency. A simple nonlinear equivalent circuit model well reproduces the experimental result. Significant changes in the radial distribution of electron density and the resultant etching rate were observed at resonance.
Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
2007-11-15