GaN Nanowires Synthesized on Si(111) Substrates by Magnetron Sputtering and Ammonification Technique

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概要

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• GaN nanowires are successfully synthesized on Si(111) substrates through ammoniating the Ga2O3/ZnO films by radio frequency magnetron sputtering system. X-ray diffraction (XRD), scanning electron microscope (SEM), field-emission transmission electron microscope (FETEM), and Fourier transform infrared spectroscopy (FTIR) are employed to examine the structural and surface morphological properties of the as-prepared GaN nanowires. The results show that the single-crystal GaN nanowires have a hexagonal wurtzite structure with lengths of about several micrometers and diameters ranging from 60 to 160 nm, which is conducive to the application of nanodevices. The assistance of the volatilization of ZnO buffer layer has a great impact on the growth of GaN nanowires. The growth mechanism is also briefly discussed.

• Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
• 2007-10-15

著者

• Zhuang Huizhao

  Institute of Semiconductors, Shandong Normal University, Jinan 250014, P. R. China

• Xue Shoubin

  Institute of Semiconductors, Shandong Normal University, Jinan 250014, P. R. China

関連論文

• GaN Nanowires Synthesized on Si(111) Substrates by Magnetron Sputtering and Ammonification Technique

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