Boron Clusters in High-Dose Implanted Silicon

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概要

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• The electronic structures and X-ray photoelectron spectra of silicon models with octahedral B6, icosahedral B12, or cubo-octahedral B12 clusters are investigated using first-principles calculations. It is found that the B6 and B12 clusters act as double acceptors in silicon and that the simulated chemical shift of the B 1s orbital signals of the B6 and cubo-octahedral B12 clusters in X-ray photoelectron spectra coincides exactly with the chemical shift of B 1s experimentally observed in as-implanted silicon at an extremely high dose of boron. These results reveal that the B6 and cubo-octahedral B12 clusters are the origin of hole carriers in silicon. We propose a mechanism for hole generation and a physical model for boron cluster formation at implantation-induced divacancy sites and multi vacancy sites.

• Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
• 2007-01-15

著者

• Kawanishi Hiroyuki

  School Of Science And Technology Kwansei Gakuin University

• Sato Daisuke

  School Of Pharmaceutical Sciences Nagasaki University

• Hayafuji Yoshinori

  School of Science and Technology, Kwansei Gakuin University, 2-1 Gakuen, Sanda, Hyogo 669-1337, Japan

• Kawanishi Hiroyuki

  School of Science and Technology, Kwansei Gakuin University, 2-1 Gakuen, Sanda, Hyogo 669-1337, Japan

• Ohmori Kengo

  School of Science and Technology, Kwansei Gakuin University, 2-1 Gakuen, Sanda, Hyogo 669-1337, Japan

• Esashi Noboru

  School of Science and Technology, Kwansei Gakuin University, 2-1 Gakuen, Sanda, Hyogo 669-1337, Japan

• Atoro Eisaku

  School of Science and Technology, Kwansei Gakuin University, 2-1 Gakuen, Sanda, Hyogo 669-1337, Japan

• Higashiguchi Yoshitsune

  School of Science and Technology, Kwansei Gakuin University, 2-1 Gakuen, Sanda, Hyogo 669-1337, Japan

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