Integrated Active Magnetic Probe in Silicon-on-Insulator Complementary Metal–Oxide–Semiconductor Technology

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概要

• 論文の詳細を見る

• A novel magnetic probe has been designed and fabricated by 0.15 μm five-metal (4M + thick metal) silicon-on-insulator (SOI) complementary metal–oxide–semiconductor (CMOS) technology to achieve both a high sensitivity and a high spatial resolution. A detecting coil having metal multilayers, a two-stage differential amplifier, a differential-to-single-ended converter, and an output buffer are integrated on a single chip. The probe is referred to as an active probe, and it has a feature to distinguish magnetic field from detected electromagnetic emissions by means of a two-turn differential coil structure and a circuit technique using a wideband differential-to-single-ended converter with a high common-mode rejection. Measurement results show the effectiveness of the active magnetic probe with the function of on-chip amplification and electric field suppression, as well as electrical switching with common-mode voltage ($V_{\text{com}}$). Moreover, for the first time, a magnetic field distribution is visualized with an active probe.

• Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
• 2006-09-15

著者

• Aoyama Satoshi

  Graduate School Of Electronic Science And Technology Shizuoka University

• Kawahito Shoji

  Graduate School Of Electronic Science And Technology Shizuoka University

• YAMAGUCHI Masahiro

  Graduate School of Electronic Science and Technology, Shizuoka University

• Aoyama Satoshi

  Graduate School of Electronic Science and Technology, Shizuoka University, 3-5-1 Johoku, Hamamatsu, Shizuoka 432-8011, Japan

• Kawahito Shoji

  Graduate School of Electronic Science and Technology, Shizuoka University, 3-5-1 Johoku, Hamamatsu, Shizuoka 432-8011, Japan

関連論文

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