Fabrication of High power, High-Efficiency Linear Array Diode Lasers by Pulse Anodic Oxidation

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概要

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• InGaAlAs/AlGaAs/GaAs double-quantum-well (DQW) linear array diode lasers with asymmetric wide waveguide have been successfully fabricated by pulse anodic oxidation upon molecular beam epitaxy material growth. High-efficiency and high-power quasi-continuous-wave (QCW) output has been realized at 808 nm wavelength. The threshold current and slope efficiency of the prepared high-fill-factor QCW devices are 24 A and 1.25 A/W, respectively, and a maximum wall-plug efficiency of 51% has been achieved.

• Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
• 2006-09-15

著者

• Bo Baoxue

  Changchun University Of Science And Technology

• Gao Xin

  Changchun University Of Science And Technology

• ZHANG Jing

  Changchun University of Science and Technology

• LI Hui

  Changchun University of Science and Technology

• QU Yi

  Changchun University of Science and Technology

• Gao Xin

  Changchun University of Science and Technology, Changchun, China

• Qu Yi

  Changchun University of Science and Technology, Changchun, China

• Li Hui

  Changchun University of Science and Technology, Changchun, China

関連論文

• Fabrication of High power, High-Efficiency Linear Array Diode Lasers by Pulse Anodic Oxidation
• Fabrication of High power, High-Efficiency Linear Array Diode Lasers by Pulse Anodic Oxidation

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