A Simple Negative Bias Temperature Instability Characterization Methodology to Minimize the Immediate Recovery Effect during Measurement

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概要

• 論文の詳細を見る

• Negative bias temperature instability (NBTI) degradation of p-channel metal–oxide–semiconductor field effect transistors ($ p$-MOSFETs) is significantly underestimated by using the conventional characterization techniques due to a severe NBTI recovery during the measurements. In this work, a simple characterization method based on the single-point measurement of the saturated drain current is proposed to minimize the unwanted recovery effect. This method is accurate as is proven by a carefully-designed experiment. With this new proposed method, the measurement time is reduced to tens of milliseconds. This method gives a closer-to-real threshold voltage shift, and yields a more reliable power-law factor and thus a more realistic NBTI picture.

• Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
• 2006-08-15

著者

• CHEN T.

  School of Electrical and Electronic Engineering, Nanyang Technological University

• Yang J.

  School Of Architecture Yeungnam University

• Chan L.

  Department Of Obstetrics And Gynaecology The Chinese University Of Hong Kong

• Tan S.

  Department Of Oral Cell Biology Academic Centre For Dentistry Amsterdam (acta) University Of Amsterd

• Tan S.

  Department of Technology Development, Chartered Semiconductor Manufacturing Ltd, 60 Woodlands Ind. Park D, Street 2, Singapore 738406

• Chan L.

  Department of Technology Development, Chartered Semiconductor Manufacturing Ltd, 60 Woodlands Ind. Park D, Street 2, Singapore 738406

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