Effects of Hydrogen on Depth Profile of Resistivity of SiGe on Si Substrate
スポンサーリンク
概要
- 論文の詳細を見る
We report that the resistivity of SiGe films deposited on a B-doped Si substrate by solid-source molecular beam epitaxy (MBE) is reduced by postgrowth hydrogen treatment and the subsequent annealing. This effect was observed near a bevel surface finished by mechanical polishing. Therefore, the damaged surface layer played an important role in this effect. The same reduction in the resistivity of the SiGe films was also observed by intentional supplying hydrogen during film deposition. These phenomena indicate that hydrogen assists the electrical activation of boron.
- 2006-05-15
著者
-
Yamashita Yoshifumi
The Graduate School of Natural Science and Technology, Okayama University, 3-1-1 Tsushima-naka, Okayama 700-8530, Japan
-
Kamiura Yoichi
The Graduate School of Natural Science and Technology, Okayama University, 3-1-1 Tsushima-naka, Okayama 700-8530, Japan
-
Miyasako Takaaki
The Graduate School of Natural Science and Technology, Okayama University, 3-1-1 Tsushima-naka, Okayama 700-8530, Japan
-
Shiotani Toshiyuki
The Graduate School of Natural Science and Technology, Okayama University, 3-1-1 Tsushima-naka, Okayama 700-8530, Japan
-
Ishiyama Takeshi
The Graduate School of Natural Science and Technology, Okayama University, 3-1-1 Tsushima-naka, Okayama 700-8530, Japan
関連論文
- Palladium--Hydrogen Complex in Silicon Observed by Electron Spin Resonance Measurement
- Effects of Hydrogen on Depth Profile of Resistivity of SiGe on Si Substrate