Current-Induced Magnetization Switching in Two Types of Nanopillar with Dual Fixed Layers

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概要

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• We study current-induced magnetization switching in nanofabricated magnetic multilayers with two different types of dual fixed layer structures. The first type is a single free layer with antiparallel aligned dual fixed layers. The second type is a synthetic antiferromagnetic (Syn.AF) free layer with parallel aligned dual fixed layers. In the former case, the switching current density ($J_{\text{c}}$) is reduced by a factor of more than two, as expected from our estimation. On the other hand, in the latter case, the dual structure does not reduce the $J_{\text{c}}$, which suggests the contributions of spin-dependent reflections and scatterings at various interfaces inside the free layer are significant. In some situations, they can reduce the total efficiency of the spin-transfer torque.

• Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
• 2006-05-15

著者

• Nakamura Shiho

  Corporate R&D Center, Toshiba Corporation, Kawasaki 212-8582, Japan

• Haneda Shigeru

  Corporate R&D Center, Toshiba Corporation, Kawasaki 212-8582, Japan

• Morise Hirofumi

  Corporate R&D Center, Toshiba Corporation, Kawasaki 212-8582, Japan

関連論文

• Current-Induced Magnetization Switching in Two Types of Nanopillar with Dual Fixed Layers

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