Bit Distribution and Reliability of High Density 1.5 V Ferroelectric Random Access Memory Embedded with 130 nm, 5 lm Copper Complementary Metal Oxide Semiconductor Logic
スポンサーリンク
概要
- 論文の詳細を見る
High density embedded ferroelectric random access memory (FRAM), operable at 1.5 V, has been fabricated within a 130 nm, 5 lm Cu/fluorosilicate glass (FSG) logic process. To evaluate FRAM extendability to future process nodes, we have measured the bit distribution and reliability properties of arrays with varying individual capacitor areas ranging from 0.40 μm2 (130 nm node) to 0.15 μm2 (${\sim}65$ nm node). Wide signal margins, stable retention (${\gg}10$ years at 85 °C), and high endurance read/write cycling (${\gg}10^{12}$ cycles) have been demonstrated, suggesting that reliable, high density FRAM can be realized.
- 2006-04-30
著者
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Matz L.
Silicon Technology Development Texas Instruments Inc.
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Hall L.
Silicon Technology Development, Texas Instruments Inc., 13560 N. Central Expressway, MS-3736, Dallas, TX 75243, U.S.A.
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Rodriguez J.
Silicon Technology Development, Texas Instruments Inc., 13560 N. Central Expressway, MS-3736, Dallas, TX 75243, U.S.A.
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Udayakumar K.
Silicon Technology Development, Texas Instruments Inc., 13560 N. Central Expressway, MS-3736, Dallas, TX 75243, U.S.A.
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Boku K.
Silicon Technology Development, Texas Instruments Inc., 13560 N. Central Expressway, MS-3736, Dallas, TX 75243, U.S.A.
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Remack K.
Silicon Technology Development, Texas Instruments Inc., 13560 N. Central Expressway, MS-3736, Dallas, TX 75243, U.S.A.
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Summerfelt S.
Silicon Technology Development, Texas Instruments Inc., 13560 N. Central Expressway, MS-3736, Dallas, TX 75243, U.S.A.
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Celii F.
Silicon Technology Development, Texas Instruments Inc., 13560 N. Central Expressway, MS-3736, Dallas, TX 75243, U.S.A.
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Aggarwal S.
Silicon Technology Development, Texas Instruments Inc., 13560 N. Central Expressway, MS-3736, Dallas, TX 75243, U.S.A.
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Martin J.
Silicon Technology Development, Texas Instruments Inc., 13560 N. Central Expressway, MS-3736, Dallas, TX 75243, U.S.A.
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Rathsack B.
Silicon Technology Development, Texas Instruments Inc., 13560 N. Central Expressway, MS-3736, Dallas, TX 75243, U.S.A.
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McAdams H.
Silicon Technology Development, Texas Instruments Inc., 13560 N. Central Expressway, MS-3736, Dallas, TX 75243, U.S.A.
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Moise T.
Silicon Technology Development, Texas Instruments Inc., 13560 N. Central Expressway, MS-3736, Dallas, TX 75243, U.S.A.
関連論文
- New method of probing barrier integrity and low-k stability
- Full-Bit Functional, High-Density 8 Mbit One Transistor–One Capacitor Ferroelectric Random Access Memory Embedded within a Low-Power 130 nm Logic Process
- Bit Distribution and Reliability of High Density 1.5 V Ferroelectric Random Access Memory Embedded with 130 nm, 5 lm Copper Complementary Metal Oxide Semiconductor Logic