Analysis of Grain Boundary Induced Nonlinear Output Characteristics in Polycrystalline-Silicon Thin-Film Transistors
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概要
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Nonlinear output characteristics in polycrystalline-silicon thin-film transistors (poly-Si TFTs) are investigated by one-dimensional analysis of carrier transport both intragrain (IG) and in grain boundaries (GBs). The analysis has revealed that nonlinear current is modulated by quasi-Fermi potential drop at the GBs and is characterized by the relationships between effective channel length ($L_{\text{eff}}$) and grain size ($L_{\text{g}}$) as well as by those between GB and IG conductance. The analysis has also demonstrated that the scaling law works when $L_{\text{eff}}$ is much larger than $L_{\text{g}}$. To verify this model, the ratios of normalized drain current (NDC) were evaluated by measurements and simulations with the reference TFT having longer $L_{\text{eff}}$. For larger $L_{\text{g}}$, variations of NDC ratios with respect to different gate voltages become salient because of variations in GB conductance, and furthermore the ratios tend to converge to unity when drain voltage goes higher. The simulated results agree well with the measurements, which confirms the validity of this model.
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
- 2006-03-15