Over-500-Mbps Data Recording on Write-Once Media with L-Shaped Write Strategy
スポンサーリンク
概要
- 論文の詳細を見る
We have confirmed the necessary conditions to achieve data recording at a channel bit rate of over 500 Mbps. We discuss the approaches and experiments adopted to realize such high-speed data recording by way of present available techniques. In order to clarify the necessary conditions for them, we have investigated the laser response speed required for recording, optimum write strategy and suitable media for high-speed mark formation. As a result of these studies, the over-500-Mbps data recording was realized by applying a new L-shaped write strategy with a laser pulse of 0.7 ns rising time to Te–O–Pd write-once media of the Blu-ray Disc format.
- 2006-02-15
著者
-
YAMADA Noboru
AV Core Technology Development Center, Matsushita Electric Industrial Co., Ltd.
-
Furumiya Shigeru
AV Core Technology Development Center, Matsushita Electric Industrial Co., Ltd., 1006 Kadoma, Kadoma, Osaka 571-8501, Japan
-
Takahashi Katsuyuki
AV Core Technology Development Center, Matsushita Electric Industrial Co., Ltd., 1006 Kadoma, Kadoma, Osaka 571-8501, Japan
-
Kitaura Hideki
AV Core Technology Development Center, Matsushita Electric Industrial Co., Ltd., 1006 Kadoma, Kadoma, Osaka 571-8501, Japan
-
Miyagawa Naoyasu
AV Core Technology Development Center, Matsushita Electric Industrial Co., Ltd., 1006 Kadoma, Kadoma, Osaka 571-8501, Japan
-
Yamada Noboru
AV Core Technology Development Center, Matsushita Electric Industrial Co., Ltd., 1006 Kadoma, Kadoma, Osaka 571-8501, Japan
関連論文
- ZrO_2-Based Interface Films Realizing a Dual-Layer Phase-Change Optical Disk Utilizing a Blue-Violet Laser
- One-Path Calibration Method of Write Strategy using Simultaneous Linear Equations
- ZrO2-Based Interface Films Realizing a Dual-Layer Phase-Change Optical Disk Utilizing a Blue-Violet Laser
- Quadruple-Layer Write-Once Disk for Blue Laser Based on Te–O–Pd Recording Films
- Ten-Times-Speed Recording on Dual Layer Blu-ray Disc Recordable Media
- Over-500-Mbps Data Recording on Write-Once Media with L-Shaped Write Strategy
- Effect of Dielectric Material Films on Crystallization Characteristics of Ge2Sb2Te5 Phase-Change Memory Film
- Local Crystal Structures of Ge2Sb2Te5 Revealed by the Atomic Pair Distribution Function Analysis