Fringe-Field Switching Mode with Three Electrodes for Low Operating Voltage
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概要
- 論文の詳細を見る
In this paper, we proposed fringe-field switching (FFS) mode with new electrode structure whose additional slit electrode in addition to conventional slit electrode is located on gate insulator for low operating voltage. Using in-plane field between first and second slit electrode as well as fringe field between first slit electrode and box electrode, the overall operating voltage is decreased from over 5 to around 4 V. However, the maximum transmittance is decreased due to strong tilt-up and over twisting effect.
- 2006-02-15
著者
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PARK Jun
SBU Development Center, BOE_TFT_LCD SBU
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Kim Hyang
Sbu Development Center Boe_tft_lcd_sbu
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Kim Seo
Sbu Development Center Boe_tft_lcd_sbu
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Lim Young
Sbu Development Center Boe_tft_lcd_sbu
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Jeong Youn
SBU Development Center, BOE TFT-LCD SBU, San 136-1, Ami-ri, Bubal-eub, Ichon-si, Kyungki-do 467-701, Korea
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Jeong Youn
SBU Development Center, BOE_TFT_LCD SBU, San 136-1, Ami-ri, Bubal-eub, Ichon-si, Kyungki-do 467-701, Korea
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Kim Seo
SBU Development Center, BOE_TFT_LCD SBU, San 136-1, Ami-ri, Bubal-eub, Ichon-si, Kyungki-do 467-701, Korea
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Lim Young
SBU Development Center, BOE_TFT_LCD SBU, San 136-1, Ami-ri, Bubal-eub, Ichon-si, Kyungki-do 467-701, Korea
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Park Jun
SBU Development Center, BOE TFT-LCD SBU, San 136-1, Ami-ri, Bubal-eub, Ichon-si, Kyungki-do 467-701, Korea
関連論文
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