Phase Transition and Temperature Dependences of Electrical Properties of [Bi0.5(Na1-x-yKxLiy)0.5]TiO3 Ceramics
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概要
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Lead-free piezoelectric ceramics [Bi0.5(Na1-x-yKxLiy)0.5]TiO3 (abbreviated BNT–BKT–BLT) were prepared by the conventional oxide method. The effects of BKT and BLT amounts on the phase transition and electrical properties were examined. BNT–BKT–BLT ceramics give good performances with piezoelectric constant $d_{33}=216$ pC/N and planar electromechanical coupling factor $k_{\text{p}}=40.1$% at 20 mol % BKT with a fixed BLT amount of 10 mol %. Also, the optimal $d_{33}$ of 173 pC/N and $k_{\text{p}}$ of 38.0% are obtained at 10 mol % and 7.5 mol % BLT, respectively when the BKT amount is 17.5 mol %. The addition of BKT reduces the depolarization temperature $T_{\text{d}}$, however, it increases the Curie temperature $T_{\text{c}}$. In contrast, $T_{\text{d}}$ and $T_{\text{c}}$ are shifted towards a higher temperature with increasing amount of BLT. BNT–BKT–BLT ceramics show typical ferroelectric features at room temperature. The addition of BKT increases the remnant polarization $P_{\text{r}}$ and lowers the coercive field $E_{\text{c}}$ significantly. The polarization–electric field ($P$–$E$) hysteresis loops at different temperatures reveal that the loops deform at a high temperature as a result of the phase transition from ferroelectric to antiferroelectric during the heating process, so that $d_{33}$ diminishes rapidly.
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
- 2006-02-15
著者
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Zhou Xiaohua
School Of Chemistry And Chemical Engineering Chongqing University
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Yuan Ying
School of Microelectronic and Solid State Electronics, University of Electronic Science and Technology of China, Chengdu 610054, People's Republic of China
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Zhang Shuren
School of Microelectronic and Solid State Electronics, University of Electronic Science and Technology of China, Chengdu 610054, People's Republic of China
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Liu Jingsong
School of Microelectronic and Solid State Electronics, University of Electronic Science and Technology of China, Chengdu 610054, People's Republic of China
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Zhang Shuren
School of Microelectronic and Solid State Electronics, University of Electronic Science and Technology of China, Chengdu 610054, People's Republic of China
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Liu Jingsong
School of Microelectronic and Solid State Electronics, University of Electronic Science and Technology of China, Chengdu 610054, People's Republic of China
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Zhou Xiaohua
School of Microelectronic and Solid State Electronics, University of Electronic Science and Technology of China, Chengdu 610054, People's Republic of China
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- Phase Transition and Temperature Dependences of Electrical Properties of [Bi0.5(Na1-x-yKxLiy)0.5]TiO3 Ceramics