Realization of High-Power Highly Efficient GaInP/AlGaInP Ridge Laser Diodes for Recordable/Rewritable Digital Versatile Discs
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概要
- 論文の詳細を見る
Very efficient and reliable GaInP/AlGaInP red multiple-quantum-well laser diodes for recordable/rewritable digital versatile disc (DVD-R/RW) were successfully developed by low-damage fabrication. Because we adopted dry etching instead of conventional chemical wet etching for the steep ridge sidewalls of laser diodes (LDs), devices could be operated at a high output power over 200 mW at 70°C without showing any unstable higher-order transverse modes. In-situ monitoring tools in metal organic chemical vapor deposition (MOCVD) and dry etching were useful for controlling process parameters precisely, which enhances device characteristics and maintains the reproducibility of device fabrication. A very small beam aspect ratio of 1.78 with a very low vertical beam divergence angle of 15.3° at a high output power was achieved by optimizing the two-step n-cladding layer in our LD structures. These low values of the vertical beam divergence angle and aspect ratio are essential for minimizing the coupling loss between the LD and the objective lens in DVD pickups.
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
- 2006-02-15
著者
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Park Yongjo
Photonics Program Team Samsung Advanced Institute Of Technology
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Cho Soohaeng
Photonics Project Team, Display Devices and Materials Lab., Samsung Advanced Institute of Technology, P. O. Box 111, Suwon, Gyeonggi 440-600, Korea
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Park Yongjo
Photonics Program Team, Samsung Advanced Institute of Technology, Mt. 14-1, Nongseo-Ri, Giheung-Eup, Yongin-Si, Gyeonggi-Do 443-743, Korea
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Kang Donghoon
Optical Semiconductor Division, Central R&D Institute, Samsung Electro-Mechanics, 314, Maetan3-dong, Suwon-Si, Gyeonggi-Do 443-743, Korea
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Kim Youngmin
Optical Semiconductor Division, Central R&D Institute, Samsung Electro-Mechanics, 314, Maetan3-dong, Suwon-Si, Gyeonggi-Do 443-743, Korea
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Kim Bumjoon
Optical Semiconductor Division, Central R&D Institute, Samsung Electro-Mechanics, 314, Maetan3-dong, Suwon-Si, Gyeonggi-Do 443-743, Korea
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Ma Byungjin
Optical Semiconductor Division, Central R&D Institute, Samsung Electro-Mechanics, 314, Maetan3-dong, Suwon-Si, Gyeonggi-Do 443-743, Korea
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Lee Changyun
Optical Semiconductor Division, Central R&D Institute, Samsung Electro-Mechanics, 314, Maetan3-dong, Suwon-Si, Gyeonggi-Do 443-743, Korea
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Lee Sangbum
Optical Semiconductor Division, Central R&D Institute, Samsung Electro-Mechanics, 314, Maetan3-dong, Suwon-Si, Gyeonggi-Do 443-743, Korea
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Kang Joonseok
Optical Semiconductor Division, Central R&D Institute, Samsung Electro-Mechanics, 314, Maetan3-dong, Suwon-Si, Gyeonggi-Do 443-743, Korea
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Shin Youngchul
Optical Semiconductor Division, Central R&D Institute, Samsung Electro-Mechanics, 314, Maetan3-dong, Suwon-Si, Gyeonggi-Do 443-743, Korea
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Kim Taegeun
Department of Electronic Engineering, Korea University, 5-1 Anam-Dong, Sungbuk-Gu, Seoul 136-075, Korea
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Ma Byungjin
Optical Semiconductor Division, Central R&D Institute, Samsung Electro-Mechanics, 314, Maetan3-dong, Suwon-Si, Gyeonggi-Do 443-743, Korea
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Lee Changyun
Optical Semiconductor Division, Central R&D Institute, Samsung Electro-Mechanics, 314, Maetan3-dong, Suwon-Si, Gyeonggi-Do 443-743, Korea
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Shin Youngchul
Optical Semiconductor Division, Central R&D Institute, Samsung Electro-Mechanics, 314, Maetan3-dong, Suwon-Si, Gyeonggi-Do 443-743, Korea
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Cho Soohaeng
Photonics Program Team, Samsung Advanced Institute of Technology, Mt. 14-1, Nongseo-Ri, Giheung-Eup, Yongin-Si, Gyeonggi-Do 443-743, Korea
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Lee Sangbum
Optical Semiconductor Division, Central R&D Institute, Samsung Electro-Mechanics, 314, Maetan3-dong, Suwon-Si, Gyeonggi-Do 443-743, Korea
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Kang Joonseok
Optical Semiconductor Division, Central R&D Institute, Samsung Electro-Mechanics, 314, Maetan3-dong, Suwon-Si, Gyeonggi-Do 443-743, Korea
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- Realization of High-Power Highly Efficient GaInP/AlGaInP Ridge Laser Diodes for Recordable/Rewritable Digital Versatile Discs