Ambipolar Carrier Injection Characteristics of Erbium-Silicided $n$-Type Schottky Barrier Metal–Oxide–Semiconductor Field-Effect Transistors

概要

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Erbium-silicided 50-nm-gate-length $n$-type Schottky barrier metal–oxide–semiconductor field-effect transistors (SB-MOSFETs) with a 5 nm gate oxide thickness are manufactured. Their on/off-current ratio is higher than $10^{5}$ with low leakage current less than 10 nA/um. The abnormal increase of drain current with a negative gate voltage is explained by the hole carrier injection from drain into the channel. In SB-MOSFETs, ambipolar carriers, i.e., electrons and holes, can be injected into the channel depending on gate voltage polarity.
Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
2006-02-15